20PCS 2SA965-Y(F,M) Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD

Descripción
Product Status Obsolete Transistor Type PNP Current – Collector (Ic) (Max) 800 mA Voltage – Collector Emitter Breakdown (Max) 120 V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current – Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V Power – Max 900 mW Frequency – Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD Base Product Number 2SA965
Características
Part NO.:2SA965-Y(F,M) Frequency – Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body
Peso
1.00 Pounds
Fabricante es CHUANGYEIC
Destacados
Part NO.:2SA965-Y(F,M), Frequency – Transition 120MHz, Operating Temperature 150°C (TJ), Mounting Type Through Hole, Package / Case TO-226-3, TO-92-3 Long Body
El País de Origen (COO, siglas en inglés) o fabricación del producto 20PCS 2SA965-Y(F,M) Bipolar (BJT) Transistor PNP 120 V 800 mA 120MHz 900 mW Through Hole TO-92MOD es China.